A novel monolithic approach for modelling crack propagation
Résumé
A new finite element method is explored to model crack propagation in a silicon substrate bonded with a stress-inducing layer. This approach is based on the level-set method coupled with anisotropic remeshing to define the crack faces and tip. Furthermore, the Gθ method is used for computing the strain energy release rate and the propagation direction. Simulations are performed in a monolithic Lagrangian framework
Domaines
Matériaux
Origine : Fichiers produits par l'(les) auteur(s)
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